Microstructure of Bulk AlN Grown by A New Solution Growth Method

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概要

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• We used transmission electron microscopy to analyse the microstructures in a thick AlN layer grown on a self-nucleated, columnar AlN seed crystal. The growth direction of the AlN layer grown by a new solution growth method was [1100]. The threading dislocation (TD) density near the epilayer-seed interface (on the seed crystal) was 10^{9} cm-2. However, owing to dislocation annihilation, the TD density decreased to 10^{8} cm-2 at a thickness of {\sim}5 μm. These results imply that the new solution growth method can grow high-crystalline-quality bulk AlN under moderate growth conditions (T \approx 1200 °C, nitrogen pressure = 1 atm).

• 2011-12-25

著者

• Epelbaum Boris

  Department Of Materials Science 6 University Of Erlangen

• Kangawa Yoshihiro

  RIAM, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Kuwano Noriyuki

  ASTEC, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Kakimoto Koichi

  RIAM, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Epelbaum Boris

  Department of Materials Science 6, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany

関連論文

• Ultrasonic Microspectroscopy Characterization of AIN Single Crystals
• Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources
• 固体原料を用いたAlN溶液成長法に関する研究(次世代素子のための窒化物結晶成長新機軸)
• Microstructure of Bulk AlN Grown by A New Solution Growth Method

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