Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal--Organic Vapor Phase Epitaxy
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概要
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The effect of growth orientation on In incorporation efficiency in InGaN films grown by metal--organic vapor phase epitaxy (MOVPE) is theoretically investigated. We propose a new theoretical model that explains the role of the surface N--H layer in In incorporation based on first-principles calculations. During III--nitride MOVPE, N-terminated reconstruction with N dangling bonds passivated by H is stable. A surface N--H layer that covers a group-III (In, Ga) atomic layer prevents In atoms from desorbing and being replaced by Ga atoms. In incorporation is therefore more efficient for higher N--H layer coverage and stability. To investigate this relationship, the enthalpy change for the decomposition of a N--H layer was calculated. This enthalpy change which depends on growth orientations is in good agreement with the experimental In content.
- 2013-08-25
著者
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Kakimoto Koichi
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Kangawa Yoshihiro
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
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Yayama Tomoe
Department of Aeronautics and Astronautics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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