Thermal Conductivity of SiC Calculated by Molecular Dynamics

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概要

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• We calculated the thermal conductivity of SiC by molecular dynamics simulation and investigated the effects of impurities on the thermal conductivity of SiC. We used Tersoff potential to express the structure of a SiC crystal. Thermal conductivity was obtained using Green–Kubo’s equation. The results show that the thermal conductivities of perfect 2H-, 3C-, 4H-, and 6H-SiC polytypes were in the range of 260 to 420 W/(m$\cdot$K) and that the thermal conductivity of 3C-SiC was the largest among the polytypes. The thermal conductivities of 4H-SiC decreased with an increase in impurity concentration above $1.0\times 10^{17}$ to $1.0\times 10^{18}$ 1/cm3.

• 2008-12-25

著者

• Yoshimura Masashi

  Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni

• Kangawa Yoshihiro

  Department Of Applied Chemistry Tokyo University Of Agriculture And Technology

• Mori Yusuke

  Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni

• Hori Daisuke

  Department Of Pediatrics Faculty Of Medicine Shimane University

• Mori Yusuke

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Kawamura Takahiro

  Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan

• Kakimoto Koichi

  Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan

• Kangawa Yoshihiro

  Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan

• Hori Daisuke

  Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan

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