Effect of Thermal Convection on Liquid Phase Epitaxy of GaN by Na Flux Method
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概要
- 論文の詳細を見る
In the liquid phase epitaxy (LPE) growth of GaN single crystals using the Na flux method, we achieved an increase in the growth rate and a change in the growth thickness distribution by generating thermal convection in the Ga–Na melt. The effect of thermal convection on the growth rate and growth thickness distribution became stronger with the strength of the convection, which indicates that thermal convection can produce a high dissolution rate of nitrogen gas into the melt as well as homogenize the nitrogen concentration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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Yoshimura Masashi
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Sasaki Takatomo
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mori Yusuke
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Kitaoka Yasuo
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Kawamura Fumio
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Kawahara Minoru
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Mori Yusuke
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Gejo Ryohei
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kitaoka Yasuo
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kawahara Minoru
Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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