Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy

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概要

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• We characterized the surface cleanliness, structure, and composition of GaN(0001) grown by liquid phase epitaxy (LPE) using coaxial impact-collision ion scattering spectroscopy (CAICISS). Contamination on the as-received LPE-GaN(0001) was removed by annealing at 900 °C, but annealing was unable to remove the O atoms from the as-grown surface, indicating that the as-grown sample incorporated O atoms. Although the as-grown sample contained O atoms, its structural perfection was maintained. These facts were explained by localization of O atoms near dislocations. The etched surface exhibited high crystalline quality, which was comparable to that of the sample grown by vapor phase epitaxy (VPE).

• 2008-09-25

著者

• Yoshimura Masashi

  Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni

• Suto Hirofumi

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Fujii Shunjiro

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Mori Yusuke

  Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni

• KITAOKA Yasuo

  Frontier Research Center, Osaka University

• Kawamura Fumio

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Honda Shin-ichi

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Katayama Mitsuhiro

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Mori Yusuke

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Yoshimura Masashi

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Kitaoka Yasuo

  Frontier Research Center, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Suto Hirofumi

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Katayama Mitsuhiro

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

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