Quasi-Medium Energy Ion Scattering Spectroscopy Observation of a Ge δ-doped Layer Fabricated by Hydrogen Mediated Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
We have observed the behavior of Ge δ-doped layers in Si(001) by Quasi-medium energy ion scattering spectroscopy (Q-MEIS). The δ-doped layers were fabricated by hydrogen mediated epitaxy (HME) of Si. We found that, in the δ-doped layers fabricated by HME, the surface segregation of Ge atoms was reduced compared with that by conventional molecular beam epitaxy (MBE). The Ge atoms, however, were widely spread in the growing film. We assume that in the HME sample, hydrogen atoms are segregated to the top-most layer of the growth surface. Moreover, the Si buffer layer has a comparatively good crystalline quality in the HME sample.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-15
著者
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KATAYAMA Mitsuhiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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OURA Kenjiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Oura K
Research Center For Ultrahigh Voltage Electron Microscopy Osaka University
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Katayama Mitsuhiro
Osaka Univ. Osaka Jpn
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Katayama Mitsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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FUSE Takashi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Tech
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Fuse T
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Fuse Takashi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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KAWAMOTO Kiyoshi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Katayama M
Shin‐etsu Handotai Co. Ltd. Gunma Jpn
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Shiizaki Takashi
Department of Electronic Engineering, Faculty of Engineering, Osaka
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Tazou Eisuke
Department of Electronic Engineering, Faculty of Engineering, Osaka
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Tazou Eisuke
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Shiizaki Takashi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Kawamoto Kiyoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Katayama Mitsuhiro
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Katayama Mitsuhiro
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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