Hydrogen Segregation and Its Detrimental Effect in Epitaxial Growth of Ge Thin Film on Hydrogen-Terminated Si(001) Surface : Surfaces Interfaces, and Films

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概要

• 論文の詳細を見る
• 2001-11-01

著者

• KATAYAMA Mitsuhiro

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• OURA Kenjiro

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• Oura K

  Research Center For Ultrahigh Voltage Electron Microscopy Osaka University

• 片山 光浩

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Katayama Mitsuhiro

  Osaka Univ. Osaka Jpn

• Katayama Mitsuhiro

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• FUJINO Toshiaki

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• Fuse T

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• Fujino Takahiro

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• OKUNO Tomohisa

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• Oura Kenjiro

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Okuno T

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• Fujino Toshiaki

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

• Okuno Tomohisa

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

• Katayama Mitsuhiro

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

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