Thermal Stability in the Morphology of Ge Films on Si(001) Grown by Hydrogen-Surfactant-Mediated Epitaxy

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概要

• 論文の詳細を見る
• 2003-01-15

著者

• Katayama M

  Osaka Univ. Osaka Jpn

• Katayama Mitsuhiro

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• FUJINO Toshiaki

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• OKUNO Tomohisa

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• Oura Kenjiro

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Okuno T

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Shindo Masato

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• TSUSHIMA Ryo

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

• Katayama M

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Tsushima Ryo

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Fujino T

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Fujino Toshiaki

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

• Okuno Tomohisa

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

• Katayama Mitsuhiro

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

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