Growth of Single-Walled Carbon Nanotubes Rooted from Fe/Al Nanoparticle Array
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概要
- 論文の詳細を見る
We explored the growth of single-walled carbon nanotubes (SWNTs) from nanoparticle array made of an Fe/Al multilayer catalyst by thermal chemical vapor deposition. Fe nanoparticles with a high number density and a narrow size distribution (1–5 nm) were efficiently formed by annealing the Fe/Al thin layer, resulting in the high-yield growth of SWNTs. Moreover, it was found that isolated SWNTs are rooted from patterned Fe/Al islands. The SWNTs bridged between electrodes exhibited semiconducting and metallic properties.
- 2005-01-15
著者
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Honda Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Katayama Mitsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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MIZUTA Tomoaki
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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MURAKAMI Toshiya
Department of Electronics and Information Science, Kyoto Institute of Technology
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Wongwiriyapan Winadda
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Ikuno Takashi
Department Of Electric Engineering Graduate School Of Engineering Osaka University
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Kisoda Kenji
Faculty Of Education Wakayama University
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Harima Hiroshi
Department Of Applied Physics Osaha University
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Yamauchi Norihiro
Department Of Applied Chemistry Nagoya Institute Of Technology
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Ikuno Takashi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Harima Hiroshi
Department of Electronics and Information Science, Kyoto Institue of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Mizuta Tomoaki
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Katayama Mitsuhiro
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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Murakami Toshiya
Department of Electronics and Information Science, Kyoto Institue of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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