Low Temperature Synthesis of Aligned Carbon Nanotubes by Inductively Coupled Plasma Chemical Vapor Deposition Using Pure Methane
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概要
- 論文の詳細を見る
Inductively coupled plasma chemical vapor deposition combined with substrate biasing using pure methane was applied to low-temperature synthesis of carbon nanotubes. We found that the resultant carbon nanotubes were crystalline even at a growth temperature of 500°C. The growth mechanism of the crystallized carbon nanotubes was discussed in terms of the moderate etching of carbon deposit by hydrogen species dissociated from methane in inductively coupled plasma.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-04-15
著者
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古田 寛
高知工科大学
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Honda Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Lee Kuei-yi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Katayama Mitsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Ikuno Takashi
Department Of Electric Engineering Graduate School Of Engineering Osaka University
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Furuta Hiroshi
Department Of Earth And Space Science Osaka University
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Ohkura Shigeharu
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Hirao Takashi
Department Of Chemistry Faculty Of Science And Technology Keio University
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Hirao Takashi
Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Katayama Mitsuhiro
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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Katayama Mitsuhiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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