SiO2 Insulator Film Synthesized at 100 °C Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• SiO2 insulator films were deposited at the substrate temperature of 100 °C by the inductively coupled plasma chemical vapor deposition (ICP-CVD) method using an organic silicon source of tetramethylsilane (4MS) and a N2O precursor. Fourier transform infrared (FT-IR) absorption peaks of O–H stretch, Si–H stretch, and Si–CH3 stretch were not observed in these SiO2 films. The refractive index of SiO2 films at 100 °C was 1.480. These results indicate that typical SiO2 films can be obtained by ICP-CVD using 4MS and N2O by increasing the substrate temperature to 100 °C. Leakage currents of 1.6 nA/cm2 and 1 μA/cm2 at breakdown voltage of 1 and 7 MV/cm, respectively, were achieved.

• 2007-03-25

著者

• 古田 寛

  高知工科大学

• Furuta Mamoru

  Research Institute For Nano-devices Kochi University Of Technology

• HIRAO Takashi

  Research Institute, Kochi University of Technology

• HIRAMATSU Takahiro

  Kochi Casio Co., Ltd.

• Furuta Hiroshi

  Research Institute For Nano-devices Kochi University Of Technology

• Furuta Hiroshi

  Department Of Earth And Space Science Osaka University

• Furuta H

  Research Institute For Nanodevices Kochi University Of Technology

• Matsuda Tokiyoshi

  Research Institute For Nano-devices Kochi University Of Technology

• Furuta Mamoru

  Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-0003, Japan

• Hirao Takashi

  Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Hirao Takashi

  Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-0003, Japan

• Furuta Hiroshi

  Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Hiramatsu Takahiro

  Kochi Casio Co., Ltd., 2420 Kureda, Nankoku, Kochi 783-0062, Japan

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