Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
The effects of postdeposition annealing at up to 350 °C on the crystallinity and thermal stability of sputter-deposited ZnO films have been investigated in terms of the deposition pressure. The average crystallite size and biaxial film stress of an as-deposited ZnO film is strongly related to the deposition pressure. A crystallization process during postdeposition annealing was only observed when the film was deposited under low pressure. Thermal desorption spectrometry (TDS) measurement revealed that Zn desorption from the ZnO film was suppressed with decreasing deposition pressure. Zn desorption from the films was correlated with rf plasma analysis results. It was found that oxygen was desorbed only from the films deposited at low pressure with annealing temperatures above 250 °C. This desorption of oxygen was strongly related to the crystallization process during postdeposition annealing.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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古田 寛
高知工科大学
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Furuta Mamoru
Research Institute For Nano-devices Kochi University Of Technology
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HIRAMATSU Takahiro
Kochi Casio Co., Ltd.
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Furuta Hiroshi
Research Institute For Nano-devices Kochi University Of Technology
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Furuta Hiroshi
Department Of Earth And Space Science Osaka University
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Furuta H
Research Institute For Nanodevices Kochi University Of Technology
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Matsuda Tokiyoshi
Research Institute For Nano-devices Kochi University Of Technology
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Hirao Takashi
Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Hirao Takashi
Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Furuta Hiroshi
Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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