Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias
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概要
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Microcrystalline silicon (μc-Si) films were deposited by inductively coupled plasma chemical vapor deposition with a low-frequency and low-duty pulse substrate bias (PSB). The crystallinity of the films was significantly improved by the PSB. In the case of the low-frequency and low-duty PSB, the duty ratio affected the crystallinity more than the negative peak voltage. Cross-sectional transmission electron microscopy measurements revealed that the nucleation density at the μc-Si/glass interface was increased by the PSB. This technique will be useful in fabricating high-performance bottom-gate μc-Si thin-film transistors for large-area electronics.
- 2010-05-25
著者
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Furuta Mamoru
Research Institute For Nano-devices Kochi University Of Technology
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HIRAMATSU Takahiro
Research Institute for Nano-devices, Kochi University of Technology
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Mamoru Furuta
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan
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Hirao Takashi
Research Institute for Nanodevices, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Takashi Hirao
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan
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Takahiro Hiramatsu
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan
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