Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
A high-quality SiO2 film was successfully achieved at a temperature of 150 °C by inductively coupled plasma chemical vapor deposition (ICP-CVD) with a bipolar pulsed bias applied to a substrate. When the SiO2 film was deposited without the pulsed substrate bias, its density rapidly decreased and its insulating property deteriorated. However, its densification was enhanced and its insulating property was improved by the pulsed substrate bias even though the deposition rate increased. A leakage current of less than 10.0 nA/cm2 and a breakdown voltage of 5.2 MV/cm at 1.0 μA/cm2 were obtained at a temperature of 150 °C with a deposition rate of 18.0 nm/min.
- 2010-03-25
著者
-
古田 寛
高知工科大学
-
HIRAMATSU Takahiro
Research Institute for Nano-devices, Kochi University of Technology
-
Furuta Hiroshi
Research Institute For Nano-devices Kochi University Of Technology
-
Furuta Hiroshi
Department Of Earth And Space Science Osaka University
-
Furuta H
Research Institute For Nanodevices Kochi University Of Technology
-
Matsuda Tokiyoshi
Research Institute For Nano-devices Kochi University Of Technology
-
Chaoyang Li
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
-
Toshiyuki Kawaharamura
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
-
Hiroshi Nitta
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan
-
Mamoru Furuta
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan
-
Takashi Hirao
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan
-
Mamoru Furuta
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan
-
Mamoru Furuta
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
-
Hiroshi Nitta
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
-
Takashi Hirao
Research Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan
-
Takashi Hirao
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
-
Furuta Hiroshi
Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
-
Tokiyoshi Matsuda
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
-
Takahiro Hiramatsu
Research Institute for Nanodevices, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, Japan
関連論文
- カーボンナノチューブの合成と電界電子放出ランプ（FEL）への応用
- カーボンナノチューブ量産技術開発と電界電子放出素子への応用
- 基板バイアスにより制御されたZnO薄膜の結晶性とドライエッチングにより形成される側壁形状との相関
- 選択エッチング法によるナノサイズ炭素エミッタ形成
- 非耐熱性基板用低温絶縁膜技術の開発 (特集 産学官協力の場--高知工科大学)
- カーボンナノチューブ材料と応用 (特集 産学官協力の場--高知工科大学)
- ZnO-TFTの開発と液晶ディスプレイへの応用 (特集 産学官協力の場--高知工科大学)
- ダイヤモンドへの内部電極の形成とそれを用いた電子放出素子 : エミッタ電極のセルフアライン加工
- ダイヤモンドナノエミッタの開発
- ダイヤモンドの高度な反応性イオンエッチング
- 単結晶ダイヤモンドの電子デバイス応用のための微細突起加工
- 尖鋭突起加工したダイヤモンド電子エミッタの開発
- 先端材料応用技術 ダイヤモンドナノエミッターの作製とその応用
- Intense Green Cathodoluminescence from Low-Temperature-Deposited ZnO Film with Fluted Hexagonal Cone Nanostructures
- Density Control of Carbon Nanotubes through the Thickness of Fe/Al Multilayer Catalyst
- Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- カーボンナノチューブパターン化エミッタと電子放出デバイス応用 (電子ディスプレイ)
- Self-Organized Pattern Formation in Porous Silicon Using a Lattice Model with Quantum Confinement Effect
- Effect of Ion Trapping Films on the Electrooptic Characteristics of Polymer-Stabilized Ferroelectric Liquid Crystal Display Exhibiting V-Shaped Switching
- Influence of the Surface Alignment Conditions and the Polymer Stabilization on the Electrooptic Characteristics of Ferroelectric Liquid Crystal Displays Exhibiting Half-V Switching : A Comparison of Photoalignment and Rubbing Technique : Structure and Mec
- Degradation of Photoluminescence and Electron Paramagnetic Defects in Naturally Oxidized or Oxygen-Implanted Porous Silicon with Electron Spin Resonance Imaging
- A $128\times 96$ Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit
- Ground Electric Field Effects on Rats and Sparrows : Seismic Anomalous Animal Behaviors (SAABs)
- Estimation of Frequency Accuracy and Stability in a Diode Laser-Pumped Rubidium Beam Atomic Clock Using a Novel Microwave Resonant Method
- Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator
- Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement
- Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement
- Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias
- Photo-Leakage Current of Zinc Oxide Thin-Film Transistors
- Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
- 低温形成表示デバイス向け絶縁膜の新規対向電極CVD法による形成(発光型/非発光型ディスプレイ合同研究会)
- カーボンナノチューブパターン化エミッタと電子放出デバイス応用(発光型/非発光型ディスプレイ合同研究会)
- Formation of Nanofibers on the Surface of Diamond-Like Carbon Films by RF Oxygen Plasma Etching
- カーボンナノチューブパターン化エミッタと電子放出デバイス応用
- 低温形成表示デバイス向け絶縁膜の新規対向電極CVD法による形成
- Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst
- 低温形成表示デバイス向け絶縁膜の新規対向電極CVD法による形成(発光型/非発光型ディスプレイ,テーマ:ディスプレイに関する技術全般:LCD(バックライトを含む),PDP,有機/無機EL,CRT,FED,VFD,LEDなどのディスプレイに関するデバイス,部品,材料及び応用技術)
- Diffusion Coefficients in 4-component Mixture Expressed Explicitly in Terms of Binary Diffusion Coefficients and Mole Fractions
- XRDを用いたカーボンナノチューブ構造体の結晶構造解析法(LSIを含む電子デバイスの評価・解析・診断,及び信頼性一般)
- 低温形成表示デバイス向け絶縁膜の新規対向電極CVD法による形成
- カーボンナノチューブパターン化エミッタと電子放出デバイス応用
- SiO2 Insulator Film Synthesized at 100 °C Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition
- 表面ボイドのミー散乱 : 小惑星の反射スペクトル
- Structural Analysis of High-Density Vertically Aligned Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition with Fe/Al Multilayer Catalyst
- Correlation between Field Electron Emission and Structural Properties in Randomly and Vertically Oriented Carbon Nanotube Films
- Low Temperature Synthesis of Aligned Carbon Nanotubes by Inductively Coupled Plasma Chemical Vapor Deposition Using Pure Methane
- Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering
- Effect of Energetic Particle Bombardment on Microstructure of Zinc Oxide Films Deposited by RF Magnetron Sputtering