Direct Growth of Single-Walled Carbon Nanotubes on W Tip Apex

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概要

• 論文の詳細を見る

• We demonstrated the direct growth of single-walled carbon nanotubes (SWNTs) on a W tip by Fe/Al catalyst-assisted chemical vapor deposition (CVD). A high-purity network of SWNTs with diameters of 0.9–3.7 nm was grown on the W tip. Under optimum CVD conditions, the growth of isolated SWNTs protruding from the W tip apex was achieved. We found that the circumference of the tip region affected the morphology of the resultant SWNTs. The direct growth method provides a potential application of SWNTs to a novel tip for scanning tunnelling microscopy (STM).

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-03-15

著者

• Honda Shin-ichi

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• Katayama Mitsuhiro

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• MIZUTA Tomoaki

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• OHMORI Takafumi

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• MURAKAMI Toshiya

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Wongwiriyapan Winadda

  Department Of Electronic Engineering Graduate School Of Engineering Osaka University

• Lee Jung-goo

  Research Center For Ultra-high Voltage Electron Microscopy Osaka University

• Kisoda Kenji

  Faculty Of Education Wakayama University

• Mori Hirotaro

  Research Center For Ultra-high Voltage Electron Microscopy Osaka University

• Harima Hiroshi

  Department Of Applied Physics Osaha University

• Mori Hirotaro

  Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Oura Kenjiro

  Research Center for Ultra High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Katayama Mitsuhiro

  Department of Elecronic Engineering, Graduate School of Engineering, Osaka University

• Murakami Toshiya

  Department of Electronics and Information Science, Kyoto Institue of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan

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