Quantitative Analysis of Hydrogen-Induced Si Segregation on Ge-Covered Si(001) Surface
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概要
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Si segregation processes on a monolayer of Ge-covered Si(001) surface during atomic hydrogen irradiation have been monitored in real time using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis. We obtained the amount of Ge atoms replaced with segregated Si atoms quantitatively, which was found to strongly depend on both substrate temperature and hydrogen flux. At substrate temperatures below 150°C, the etching of Ge atoms as well as the surface segregation of Si atoms occurred, while only the Si segregation was observed beyond 150°C. At elevated temperatures, the Si segregation was promoted with increasing atomic hydrogen flux for the surface being occupied by Si monohydrides together with Ge ones, while it was suppressed upon formation of Si dihydrides.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-01
著者
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Katayama Mitsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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FUJINO Toshiaki
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Inoue Shin-ichi
Department Of Applied Chemistry Aichi Institute Of Technology
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Inoue Shin-ichi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Tatsumi Atsunobu
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Horikawa Takeyuki
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Fujino Toshiaki
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Fujino Toshiaki
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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Katayama Mitsuhiro
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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