Influence of Plasma State on the Structural Property of Vertically Oriented Carbon Nanotubes Grown by RF Plasma-Enhanced Chemical Vapor Deposition
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概要
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We investigated the correlation between plasma state and structural property in the growth of vertically oriented carbon nanotube (V-CNT) by RF plasma-enhanced chemical vapor deposition (RF-CVD) using pure CH4. The plasma diagnostics in the RF-CVD was performed as a function of RF power using optical emission spectroscopy and self-bias ($V_{\text{dc}}$) measurement. The structural properties of the grown V-CNT were significantly correlated with the fractions of CH radicals, H atoms or radicals, and $V_{\text{dc}}$, which were increased with increasing RF power. It was suggested that during V-CNT growth, the H species act as etchants, while the CH radical acts as a precursor of the growth. These antagonistic factors influenced the structural properties of V-CNT, yielding an optimum RF power for the growth of V-CNTs with good crystallinity.
- 2003-10-15
著者
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Honda Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Katayama Mitsuhiro
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Ikuno Takashi
Department Of Electric Engineering Graduate School Of Engineering Osaka University
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Hiwatashi Shinji
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Ohkura Shigeharu
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Kamada Kazunori
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Hiwatashi Shinji
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Katayama Mitsuhiro
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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