Submonolayer Er Phases on Si(111)
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概要
- 論文の詳細を見る
Using scanning tunneling microscopy, formation and structure of the submonolayer Er/Si(111) phases have been studied. Depending on the growth conditions, one of two submonolayer phases is formed, $2\sqrt{3}\times 2\sqrt{3}$ or $\sqrt{3}\times\sqrt{3}$. A metastable $2\sqrt{3}\times 2\sqrt{3}$ phase develops at the deposition of ${\sim}0.1--0.6$ ML of Er onto a Si(111) $7\times 7$ surface held at ${\sim}300$°C and disappears upon annealing to ${\sim}500$°C. The $2\sqrt{3}\times 2\sqrt{3}$ phase contains about 0.5 ML of Er and incorporates an incomplete top Si(111) bilayer. A $\sqrt{3}\times\sqrt{3}$ phase is formed at annealing of ${\sim}0.5--1.0$ ML of Er to ${\sim}500--650$°C. It exhibits a honeycomb-like structure and accumulates 2/3 ML of Er and a complete top Si(111) bilayer. The possible structures of the $2\sqrt{3}\times 2\sqrt{3}$ and $\sqrt{3}\times\sqrt{3}$ Er/Si(111) submonolayer phases are discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Pisarenko Inna
Institute Of Automation And Control Processes
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ZOTOV Andrey
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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LIFSHITS Victor
Institute of Automation and Control Processes
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Saranin Alexander
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Saranin Alexander
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Zotov Andrey
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Katayama Mitsuhiro
Department of Elecronic Engineering, Graduate School of Engineering, Osaka University
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Katayama Mitsuhiro
Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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