Direct Observation of the Growth Process of Ag Thin Film on a Hydrogen-Terminated Si(111) Surface
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概要
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Using a field emission scanning electron microscope (FE-SEM), we have observed the effects of the saturation of surface dangling bonds of Si(111) surfaces with atomic hydrogen upon Ag thin-film (∼10 monolayers) growth. In Ag deposition at high temperatures, we found that Ag islands grew to large sizes on a hydrogen-terminated surface compared with the results on the clean surface.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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OURA Kenjiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Oura Kenjiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Shoji Fumiya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Shoji Fumiya
Department Of Applied Physics Faculty Of Engineering Kobe University
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NAITOH Masamichi
Department of Electrical Engineering, Kyushu Institute of Technology
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Oura Kenjiro
Department Of Elecronic Engineering Graduate School Of Engineering Osaka University
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Naitoh M
Kyushu Inst. Technol. Kitakyushu Jpn
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Naitoh Masamichi
Department Of Electrical Engineering Kyushu Institute Of Technology
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