Growth Processes of Si(111)-√<3>×√<3>-Ag Studied by Scanning Tunrueling Microscope

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概要

• 論文の詳細を見る

• Domain growth processes of Si(111)√<3>×√<3>-R30°-Ag surfaces and their dependence upon deposition conditions have been investigated by means of scanning tunneling microscope. When Ag is deposited at room temperature small islands are formed on the terraces. After annealing at 350℃, these small islands change into √<3>-Ag domains on the terraces without diffusion of Ag atoms to the step edges. On the other hand, when Ag is depositedon a hot substrate of about 350℃, the √<3>-Ag domains nucleate at the step edges and few √<3>-Ag domains are observed on the terraces. Moreover two kinds of √<3>-Ag domains are found in either case: one domain is geometrically higher than the other domain.

• 社団法人応用物理学会の論文
• 1993-06-30

著者

• OURA Kenjiro

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• Oura K

  Research Center For Ultrahigh Voltage Electron Microscopy Osaka University

• Ohnishi Hiroaki

  Fujitsu Laboratories Ltd.

• Ohnishi H

  Taihei Kogyo Co. Ltd. Himeji Jpn

• Shoji Fumiya

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Shoji F

  Electron Engineering Faculty Of Engineering Osaka University

• Shoji Fumiya

  Department Of Applied Physics Faculty Of Engineering Kobe University

• Ohnishi Hiroaki

  Division Of Hematology Faculty Of Medicine Kagawa University

• Ohnishi Hideaki

  Department Of Materials Science Faculty Of Engineering Toin University Of Yokohama

• KATAYAMA Itsuo

  Department of Applied Physics, Faculty of General Education, Osaka Institute of Technology

• OHBA Yasuyuki

  Department of Applied Physics, Faculty of General Education, Osaka Institute of Technology

• Oura Kenjiro

  Department Of Elecronic Engineering Graduate School Of Engineering Osaka University

• Ohba Yasuyuki

  Department Of Inorganic Materials Faculty Of Engineering Tokyo Institute Of Technology

• Katayama I

  Department Of Applied Physics Faculty Of General Education Osaka Institute Of Technology

• Shoji Fumiya

  Faculty Of Engineering Osaka University

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