Room-Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Silicon Doping in Nonplanar Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Hirai M
Osaka Univ. Osaka Jpn
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Hirai Manabu
Atr Adaptive Communications Research Laboratories:(present Address)murata Manufacturing Co. Ltd.
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)nhk Science And Technical Researc
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Fujita K
Department Of Electrical Engineering Kyushu Institute Of Technology
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Fujita K
Gifu National Coll. Technol. Gifu Jpn
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Fujita Kazuhisa
Ion Engineering Research Institute Corporation
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Fujita K
Takasago R & D Center Mitsubishi Heavy Industries Ltd.
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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Hirai Masaaki
Research Laboratory For Surface Science Faculty Of Science Okayama University
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OHNISHI Hajime
ATR Adaptive Communications Research Laboratories
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FUJITA Kazuhisa
ATR Adaptive Communications Research Laboratories
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Hirai M
Department Of Earth And Space Science Graduate School Of Science Osaka University
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Watanabe Takeo
Univ. Hyogo Hyogo Jpn
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Ohnishi Hiroaki
Division Of Hematology Faculty Of Medicine Kagawa University
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Hirai Masamitsu
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Fujita K
Atr Adaptive Communications Research Laboratories
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Watanabe Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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