Atomic-Layer Surface Reaction of SiH_4 on Ge(100) (<Special Issue> Quantum Dot Structures)

概要

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The single atomic layer growth process of Si on a Ge(100) surface using SiH_4 has been investigated by ultraclean cold-wall low-pressure chemical vapor deposition (CVD). Self-limiting reaction of SiH_4 on the Ge surface was found at 260℃ and the reaction step can be explained by Langmuir-type kinetics. The saturated surface concentration of Si atoms depends on the preheating conditions. A single atomic layer was found for preheating at 350℃ in Ar and at 260℃ in H_2. However, in the case of preheating in H_2 at 350℃, the Si atom concentration hardly reached that of a single atomic layer. Reflection high-energy electron diffraction (RHEED) and Fourier-transform infrared reflection adsorption spectroscopy (FTIR/RAS) observations showed that a H-terminated dimer structure was formed on the Ge(100) surface after preheating in H_2 at 350℃. The density of the SiH_4 reaction sites on the H-terminated surface with the dimer structure is considered to be lower than that of the H-terminated unreconstructed surface and the H-free surface.
社団法人応用物理学会の論文
1997-06-30