高清浄雰囲気下での熱CVD法によるSi上のGe成長初期過程

概要

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The growth characteristics in the initial stage of Ge epitaxy on the Si(100) epitaxial buffer layer have been investigated by ultraclean LPCVD at 350℃ using GeH_4 with H_2 or Ar as a carrier gas. When H_2 was used as a carrier gas, an incubation period for Ge nucleus formation on Si was found. After the incubation period layer growth of Ge film started. When Ar was used as a carrier gas, the incubation period was drastically reduced without any change in the layer growth rate. The nucleus size was larger and the nucleus density was lower in the case of using H_2 as a carrier gas in comparison with using Ar. These growth characteristics are attributed to the suppression of adsorption and/or decomposition of GeH_4 on the H-terminated Si surface in the case of H_2 as a carrier gas.
東京工芸大学の論文
1997-01-31