Phosphorus Doping in Si1-x-yGexCy Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH4–GeH4–CH3SiH3–PH3–H2 Gas System

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Phosphorus doping in Si1-x-yGexCy ($0\leqq x\leqq 0.78$, $0\leqq y\leqq 0.016$) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH4–GeH4–CH3SiH3–PH3–H2 gas system is investigated. The relationship among the Ge, the C fraction, the P concentration ($C_{\text{P}}$), the deposition rate, and the deposition conditions in the P-doped Si1-x-yGexCy epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the $C_{\text{P}}$, and the resistivity in the P-doped Si1-x-yGexCy for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si1-x-yGexCy with low Ge and C fractions ($x\leqq 0.48$ and $y\leqq 0.0046$) is nearly equal to $C_{\text{P}}$ below approximately $2\times 10^{20}$ cm-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of $C_{\text{P}}$. The existence of C ($y\geqq 0.0048$) in the film reduces the Hall mobility.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-04-30