Fabrication of a Si_<1-x>Ge_x Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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室田 淳一
東北大学 電気通信研究所
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Takata M
Nagaoka Univ. Technology Niigata
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Ono S
Tohoku Univ. Sendai
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Ono Shoichi
Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University
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Maeda T
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Maeda T
Electrotechnical Lab. Tskuba Jpn
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Maeda Toru
Department Of Material Science Graduate School Of Engineering Tohoku Uniiversity
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Maeda T
Storage Technology Research Center Research & Development Group Hitachi Ltd.
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Maeda T
Electrotechnical Lab. Ibaraki Jpn
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Maeda Tatsuro
Electrotechnical Laboratory
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Yokoo Kuniyoshi
Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University
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GOTO Kenya
Department of Information and Communication Technology Tokai University
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Schutz Reiner
Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University : O
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Goto K
Department Of Information And Communication Technology Tokai University
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Kircher Roland
Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University : (
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Murota Junichi
Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University
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Murota Junichi
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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GOTO Kinya
Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University
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MAEDA Takahiro
Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University
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AIZAWA Kiyohito
Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University
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Aizawa Koji
Department of Physiology, Tokyo Medical University
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