Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Welts on (111)A Patterned Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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Hosoda Masahiro
Frontier Research Program The Institute Of Physical And Chemical Research (riken):(present Address)
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
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Watanabe T
Reserch And Development Division Toto Ltd.
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Hosoda M
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe T
Tohoku Univ. Sendai Jpn
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Hosoda Masahiro
Central Research Laboratories Sharp Corporation
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HOSODA Makoto
ATR Optical and Radio Communications Research Laboratories
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YAMAMOTO Teiji
ATR Optical and Radio Communications Research Laboratories
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Takebe Toshihiko
Atr Optical And Radio Communications Research Laboratories
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INAI Makoto
ATR Optical and Radio Communications Research Laboratories
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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