Low-Operation-Voltage Comb-Shaped Field Emitter Array
スポンサーリンク
概要
- 論文の詳細を見る
The dependence of emission properties on the structure of comb-shaped lateral field emitter arrays (FEAs) has been investigated. The present FEA consists of an array of rectangular emitter tips with 3 μm-wide edges and a gate self-aligned to the emitter. It was found from experimental results that the ratio of pitch (=p) to edge width (=a) of the array had a strong influence on the emission properties, and that p/a∼3 was an optimum ratio to lower the operation voltage. Under this condition, an emission current of 1.4 μA/tip was obtained at a gate voltage of 110 V.
- 社団法人応用物理学会の論文
- 1992-07-01
著者
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Itoh Satoru
Department Of Applied Physics Hokkaido University
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Itoh S
Futaba Corp. Chiba Jpn
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh S
Kyushu Univ. Kasuga Jpn
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Itoh Shigeo
Futaba Corporation
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TSUBURAYA Kazuhiko
FUTABA Corporation
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