Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
-
YAMASHITA Yoshio
SORTEC Corporation
-
TAGUCHI Takao
SORTEC Corporation
-
Oizumi H
Hitachi Ltd. Tokyo Jpn
-
Oizumi H
Aset Euvl Lab. Kanagawa Jpn
-
Oizumi Hiroaki
Sortec Corporation
-
Watanabe Teruo
Futaba Corporation
-
Atoda Nobufumi
Laboratory For Advanced Optical Technology National Institute Of Advanced Industrial Science And Tec
-
Atoda N
Sortec Ibaraki Jpn
-
Atoda Nobufumi
Sortec
-
Murakami K
静岡大学電子工学研究所
-
Watanabe T
Components Development Group Sony Corporation
-
Watanabe T
Ritsumeikan Univ. Shiga Jpn
-
Watanabe Tetsu
Components Development Group Sony Corporation
-
Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
-
Watanabe T
Reserch And Development Division Toto Ltd.
-
Nagata H
Sumitomo Osaka Cement Co. Ltd. Chiba Jpn
-
MURAKAMI Katsuhiko
Main Research Laboratory, Nikon Corporation
-
NAGATA Hiroshi
Main Research Laboratory, Nikon Corporation
-
OHTANI Masayuki
Main Research Laboratory, Nikon, Corporation
-
OSHINO Tetsuya
Main Research Laboratory, Nikon, Corporation
-
MAEJIMA Yukihiko
SORTEC Corporation
-
WATANABE Takeo
SORTEC Corporation
-
Yamashita Yohachi
Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Toshiba Materials & Devices Research Laboratories
-
Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Watanabe T
Tohoku Univ. Sendai Jpn
-
Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
-
TAGUCHI Takao
ASET Super-fine SR Lithography Laboratory
-
Nagata Hiroshi
Main Research Laboratory Nikon Corporation
-
Yamaguchi Yoh-ichi
Hoya Corporation
-
Yamashita Yoshio
Sortec Corporation:(present Address) Oki Electric Industry Co. Ltd.
-
Murakami Kouichi
Institute Of Material Science University Of Tsukuba
-
Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
-
Oshino Tetsuya
R&d Headquarters Nikon Corporation
-
Oshino Tetsuya
Precision Equipment Company Nikon Corporation
-
Yamashita Y
Central Research Laboratory Hamamatsu Photonics K.k.
-
Ohtani M
Obihiro Univ. Agriculture And Veterinary Medicine Obihiro Jpn
-
Maejima Y
Silicon Systems Research Laboratories Nec Corporation
-
Murakami K
Research Institute Of Electronics Shizuoka University
-
Oshino Tetsuya
Research Laboratory Nikon Corporation
関連論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
- Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- New Structure Disk for a Magneto-Optical Composite Head System : Head Technology
- New Structure Disk for a Magneto-Optical Composite Head System
- A Magneto-Optical Recording Method of Magnetic Field Modulation with Pulsed Laser Irradiation : DRIVE TECHNOLOGY II
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
- Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_Nb_)O_3/9% PbTiO_3
- Diffuse Optical Tomography using Time-resolved Photon Path Distribution
- Calculation of Photon Path Distribution Based on Photon Behavior Analysis in a Scattering Medium
- Average Value Method:A New Approach to Practical Optical Computed Tomography for a Turbid Medium Such as Human Tissue
- High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Alternative Interpretation of Impulse Response of Phonon-Polaritons
- Excitation of Phonon-Polaritons with Asymmetric Transient Grating
- Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor
- Relationship between Electrical Resistivity and Electrostatic Force of Alumina Electrostatic Chuck
- Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
- Multiphonon Raman Scattering Enhanced by Resonance with Band Gap A_g Luminescence State in Trans-Polyacetylene
- Blurring and Broadening of Reflection Spectra Due to Structural and Alignment Changes of Conjugated Chains Caused by Isomerization and Stretching in Trans-Polyacetylene
- Luminescence and Multiphonon Raman Scattering Excited at Exciton-Forming Vibronic Absorption Subbands in Trans-Polyacetylene
- Photocurrent Excitation Spectra Observed with An-Al Heteroelectrodes Biased Reversely and Reflection Spectra in Trans-Polyacetylene
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- Influence of RF Power on Properties of a-Si_Ge_x:H Prepared by RF Glow Discharge Decomposition
- Two Components of Light-Induced Photoconductivity Decays in a-Si:H
- Fabrication of a New Multilayered Amorphous Silicon Photoreceptor Drum by Glow Discharge Method
- Biexciton Luminescence from GaN Epitaxial Layers
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- F-K XANES Studies of Alkali Fluorides
- F-K XANES Studies of Alkaline-Earth Fluorides
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Technology Utilizing an Optical Stepper
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
- New Dry Surface-Imaging Process for X-Ray Lithography
- Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
- Freeze-Drying Process to Avoid Resist Pattern Collapse
- X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Performance of X-Ray Stepper for Next-Generation Lithography
- Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
- Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
- Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
- Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
- Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
- Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
- Consideration of Solvent Effect on Precipitation Polymerization of Poly(ether-ketone)s via Friedel-Craft Acylation
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Pyroelectric Infrared Sensor Using Modified PbTiO_3 Ceramics
- Polymerization Behavior of Poly(ether ketone) via Friedel-Crafts Acylation Studied by End-Group Analysis with H NMR
- Synthesis of Thermally Cross-Linkable Fluorine-containing Poly(aryl ether ketone)s I. Phenylethynyl Terminated Poly(aryl ether ketone)s
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Synthesis of Novel Fluorine-Containing Poly(aryl ether nitrile)s Derived from 2,3,4,5,6-Pentafluorobenzonitrile
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Metalorganic Chemical Vapor Deposition Growth of GaN Using a Split-flow Reactor
- Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
- Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
- Improvement in Radiation Stability of SiN X-Ray Mask Membranes
- Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
- 60GHz mixer MMIC for millimeter wave radar
- Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
- Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
- Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
- Sub-0.1μm Patterning with High Aspect Ratio of 5 Achieved by Preventing Pattern Collapse