Valence Band Structure and Optical Gain in Cd_xZn_<1-x>/ZnS Quantum Wells : Short Note

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概要

• 論文の詳細を見る

• We have calculated the valence band structures in Cd_xZn_<1-x>/ZnS quantum wells (QWs). The coupling effect appears between the heavy-hole and light-hole subbands. The variation of the slope of E-k_‖ dispersion curves reflects the variation of the heavy- and light-hole masses in the Cd_xZn_<1-x>S wells. The optical gain formation requires a higher carrier concentration than that of the GaAs-based QWs.

• 社団法人応用物理学会の論文
• 2002-07-15

著者

• SHOJI Tadayoshi

  Department of Electronics, Tohoku Institute of Technology

• TAGUCHI Tsunemasa

  Department of Electrical and Electronic Engineering, Yamaguchi University

• TAGUCHI Takao

  SORTEC Corporation

• Taguchi T

  Research Laboratories Nippondenso Co. Ltd.

• Shoji T

  Department Of Electronics Tohoku Institute Of Technology

• 小野寺 力

  Electronic Engineering Course Aomori Prefectural Towada Technical Senior High School

• TAGUCHI Takao

  ASET Super-fine SR Lithography Laboratory

• Taguchi T

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Taguchi Tsunemasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• ONODERA Chikara

  Department of Electrical Engineering, Faculty of Engineering, Osaka University

• HIRATATE Yukio

  Department of Electronics, Tohoku Institute of Technology

• Hiratate Y

  Department Of Electronics Tohoku Institute Of Technology

• SHOJI Tadayoshi

  Electronic Engineering Course, Aomori Prefectural Ho.chinohe Technical Senior High School

• HIRATATE Yukio

  Electronic Engineering Course, Aomori Prefectural Ho.chinohe Technical Senior High School

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