High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-11-30
著者
-
TAGUCHI Takao
SORTEC Corporation
-
Ikeda Ken-ichi
Research And Development Center Toshiba Corporation
-
FUJIMOTO Sadanari
Research and Development Center, Toshiba Corporation
-
TAGUCHI Toyoki
Research and Development Center, Toshiba Corporation
-
HASEGAWA Hiroshi
Research and Development Center, Toshiba Corporation
-
KOBORI Hiromichi
Research and Development Center, Toshiba Corporation
-
SATOH Hiroharu
Research and Development Center, Toshiba Corporation
-
SUGAYA Toshihiro
Research and Development Center, Toshiba Corporation
-
KOBAYASHI Tadashi
Information Systems Engineering Laboratory, Toshiba Corporation
-
SUZUKI Katsumi
Information Systems Engineering Laboratory, Toshiba Corporation
-
TAGUCHI Takao
ASET Super-fine SR Lithography Laboratory
-
Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
-
Satoh H
Hitachi Ltd. Tokyo Jpn
-
Kobori H
Toshiba Corp. Kawasaki Jpn
-
Kobori Hiromichi
Research And Development Center Toshiba Corp.
-
Sugaya T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Fujimoto S
Waseda Univ. Tokyo Jpn
-
Hasegawa Hiroshi
Research And Development Center Toshiba Corp.
-
Hasegawa Hiroshi
Research And Development Center Toshiba Corporation
関連論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
- Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Alternative Interpretation of Impulse Response of Phonon-Polaritons
- Excitation of Phonon-Polaritons with Asymmetric Transient Grating
- Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
- Biexciton Luminescence from GaN Epitaxial Layers
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Cell Projection Lithography with Scattering Contrast
- High-Density Recording Capability of Five-Layered Phase-Change Optical Disc
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Performance of X-Ray Stepper for Next-Generation Lithography
- Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
- Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy
- Thermal Characteristics of Si Mask for EB Cell Projection Lithography
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- Rewritable Optical Head Using ± First-order Diffracted Beams of a Holographic Optical Element
- A Partial Response Maximum Likelihood Simulator to Evaluate the Effects of Various Deterioration Factors in Optical Disks
- Demonstration of Calcium Ion Distribution in Calcifying Cells : X-ray Microanalysis and Electron Spectroscopic Imaging after Fixation with NHA-Containing Fixative and Microwave Irradiation
- Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
- 60GHz mixer MMIC for millimeter wave radar
- Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
- Electric-field control of coupled states in weakly coupled quantum dots
- Photon Statistics in a Thick Barrier Coupled Quantum Dot
- Carrier correlations in single pair of coupled quantum dots
- Ultrafast Coherent Control of Excitons Using Pulse-Shaping Technique
- Manipulation of Coherent Exciton towards Novel Ultrafast Devices
- Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
- Characteristics of Bending Parts of Metal Plates Using Ultrasonic Bending Systems with a Vibration Punch and a Vibration Die
- Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
- Selective Growth of GaAs by Molecular Beam Epitaxy
- Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Studies on Ultrasonic Vibration Bending of Thin Metal Plates : High Power Ultrasonics
- A Partial Response Maximum Likelihood Simulator to Evaluate the Effects of Various Deterioration Factors in Optical Disks
- High-Density Recording Capability of Five-Layered Phase-Change Optical Disc