Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• TAGUCHI Tsunemasa

  Department of Electrical and Electronic Engineering, Yamaguchi University

• TAGUCHI Takao

  SORTEC Corporation

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Taguchi T

  Research Laboratories Nippondenso Co. Ltd.

• KURAI Satoshi

  Department of Electrical and Electronic Engineering, University of Tokushima

• KUBO Shuichi

  Department of lmmunology The tokyo Metropolitan Institute of Medical Science

• Kubo S

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kubo Shuichi

  Department Of Internal Medicine Saiseikai Yokohama-shi Nanbu Hospital

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• Taguchi Tsunemasa

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  Faculty Of Engineering Yamaguchi University

• IWATA Shiro

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University

• KAINOSHO Keiji

  Japan Energy Corporation

• YOKOHATA Akihito

  Japan Energy Corporation

• Taguchi T

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Taguchi Tsunemasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Iwata Shiro

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

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