Developing White LED Lighting Systems and Its Technological Roadmap in Japan
スポンサーリンク
概要
- 論文の詳細を見る
This article is concerned with a summary of the future prospect of white light-emitting diode (LED) lighting technologies that have been heralded in "white LED lighting environment" special committee in the Illuminating Engineering Institute of Japan since 2002. The properties of various high-efficiency LEDs that are currently commercialized for practical application are firstly described. Since the characteristic feature of white LED lighting in terms of light distribution are strongly dependent on the light source design, we thus designate to construct new concept of light quality which takes into consideration both product design and lighting design. It is expected that the transition from traditional lighting is likely to progress from around 2010 in comparison with several kinds of incandescent bulbs and fluorescent lamps. Finally, the technological roadmap has been disclosed on the basis of our discussion.
- 社団法人照明学会の論文
著者
-
TAGUCHI Tsunemasa
Faculty of Engineering, Yamaguchi University
-
Taguchi Tsunemasa
Graduate School Of Science And Engineering Yamaguchi University
-
Taguchi Tsunemasa
Faculty Of Engineering Yamaguchi University
-
Taguchi Tsunemasa
Yamaguchi Univ. Yamaguchi Jpn
関連論文
- Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
- Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
- A Novel White LED Lighting System for Appreciation of Japanese Antique Ink Painting
- Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
- Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition
- Dependence of Exciton-Longitudinal-Optical-Phonon Interaction Energy on Well Width in Cd_Zn_Se/ZnSe Multiple-Quantum Wells
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
- Radiative Recombination of Hot Electrons in InGaN Single Quantum Well Blue LEDs
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Developing White LED Lighting Systems and Its Technological Roadmap in Japan
- High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy(LED Lighting Technologies)
- Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
- Present Status of White LED Lighting Technologies in Japan(LED Lighting Technologies)
- Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method (Special Issue on Quarter Micron Si Device and Process Technologies)
- Phase Defect Repair Method for Alternating Phase Shift Masks Conjugate Twin-Shifter Method
- Superior Illuminant Characteristics of Color Rendering and Luminous Efficacy in Multilayered Phosphor Conversion White Light Sources Excited by Near-Ultraviolet Light-Emitting Diodes
- The Concept of Fashion Design on the Basis of Color Coordination Using White LED Lighting
- Present Status of Energy Saving Technologies and Future Prospect in White LED Lighting