Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

スポンサーリンク

概要

• 論文の詳細を見る

• Excitonic optical properties of GaN homoepitaxial layers have been studied by means of magneto-luminescence and time-resolved luminescence spectroscopy. The luminescence lines due to the radiative recombination of excitons bound to neutral donors and acceptors have been measured under magnetic field up to 8T, which was aligned perpendicular and parallel to the hexagonal c-axis. Under the magnetic field aligned perpendicular to the hexagonal c-axis, both the donor- and acceptor-bound-exciton lines clearly split into two components, which originated from the Zeeman splitting. The effective g-factors for both the donor- and acceptor-bound excitons were estimated to be 2.02 and 2.47, respectively. Under the magnetic field aligned parallel to the hexagonal c-axis, slight broadening of the bound-exciton lines was observed and the Zeeman splitting was too small to be detected. On the other hand, the diamagnetic shift for both the donor- and acceptor-bound-exciton luminescence lines was observed under the magnetic field aligned both perpendicular and parallel to the hexagonal c-axis. It was found that the diamagnetic shift of the donor-bound exciton was smaller than that of the acceptor-bound exciton. Furthermore, recombination dynamics of excitonic transitions was measured under high-density excitation. An excitation-density-dependent transition of the dominant radiative recombination process from donor-bound excitons to biexcitons was clearly observed in the temporal behavior. In addition, double-exponential decay of biexciton luminescence was observed, which is one of the characteristics of biexciton luminescence at high excitation densities.

• 社団法人電子情報通信学会の論文
• 2000-04-25

著者

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  Graduate School of Science and Engineering, Yamaguchi University

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Taguchi T

  Department Of Materials Science And Engineering Yamaguchi University

• Sugahara Tomoya

  The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima

• Sugahara T

  The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima

• Sugahara Tomoya

  Graduate School Of Engineering The University Of Tokushima

• Nishino K

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Nishino K

  Department Of Electronic Science And Engineering Kyoto University

• Nishino Katsushi

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• YAMADA Yoichi

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• SASAKI Chiharu

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• YOSHIDA Yohei

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• KURAI Satoshi

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  The authors are with the Department of Electrical and Electronic Engineering, Yamaguchi University

• NISHINO Katsushi

  The authors are with the Department of Electrical and Electronic Engineering, University of Tokushim

• SAKAI Shiro

  The authors are with the Department of Electrical and Electronic Engineering, University of Tokushim

• Taguchi Tsunemasa

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  Faculty Of Engineering Yamaguchi University

• Yamada Y

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Yamada Y

  Department Of Materials Science And Engineering Yamaguchi University

• Sasaki Chiharu

  The Authors Are With The Department Of Electrical And Electronic Engineering Yamaguchi University

• Yamada Yoichi

  Faculty Of Education Utsunomiya University

• Taguchi Tsunemasa

  Department Of Materials Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  The Authors Are With The Department Of Electrical And Electronic Engineering Yamaguchi University

• Sugahara Tomoya

  The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai Shiro

  Department of Electrical and Electronic Engineering, The University of Tokushima

関連論文

• Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
• Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
• Thermal Stress and Dislocation Density in Undercut GaAs on Si
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
• Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
• Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
• A Novel White LED Lighting System for Appreciation of Japanese Antique Ink Painting
• Role of Dislocation in InGaN Phase Separation
• Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
• Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Pressure Effects on T_c of Superconductor YBa_2Cu_4O_8
• The Phase Decomposition of YBa_2Cu_3O_ Induced by HIP
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
• Biexciton Luminescence from GaN Epitaxial Layers
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
• Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
• Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
• Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
• Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
• Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
• Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
• High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
• Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
• Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
• Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
• Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
• Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
• Evaluation of Thermal Expansion Coefficient of Twinned YBa_2Cu_3O_7-δ Film for Prediction of Crack Formation of Various Substrates
• Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
• Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
• Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
• Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Fabrication of REBa_2Cu_3O_x (RE=Y, Nd) Films on Yttria-Stabilized Zirconia by Liquid Phase Epitaxial Method with Ba-Cu-O-F Flux
• Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
• Growth Mechanism of YBa_2Cu_4O_8(124) Phase in Metalorganic Chemical Vapor Deposition Film
• The 124 Phase in Y-Ba-Cu-O Films Fabricated by Metalorganic Chemical Vapor Deposition
• Surfaces and Interfaces of High-T_c Superconductors for Contact and Junction Formation Studied with Synchrotron Radiation Photoemisison Spectroscopy : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
• Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition
• Dependence of Exciton-Longitudinal-Optical-Phonon Interaction Energy on Well Width in Cd_Zn_Se/ZnSe Multiple-Quantum Wells
• Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
• Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
• Radiative Recombination of Hot Electrons in InGaN Single Quantum Well Blue LEDs
• Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
• Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
• Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
• Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
• Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
• Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
• Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
• Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
• Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
• A Digital Method of Gas Laser Etching for Oxide Superconductors
• Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal
• Characteristics of Right- and Left-Handed Polymer-Dispersed Cholesteric Liquid Crystals
• Reflective Color Display Using Polymer-Dispersed Cholesteric Liquid Crystal
• Developing White LED Lighting Systems and Its Technological Roadmap in Japan
• Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy(LED Lighting Technologies)
• Fabrication and Illuminance Properties of Phosphor-conversion Green Light-emitting Diode with a Luminous Efficacy over 100 lm/W
• Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Present Status of White LED Lighting Technologies in Japan(LED Lighting Technologies)
• Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method (Special Issue on Quarter Micron Si Device and Process Technologies)
• Phase Defect Repair Method for Alternating Phase Shift Masks Conjugate Twin-Shifter Method
• Superior Illuminant Characteristics of Color Rendering and Luminous Efficacy in Multilayered Phosphor Conversion White Light Sources Excited by Near-Ultraviolet Light-Emitting Diodes
• The Concept of Fashion Design on the Basis of Color Coordination Using White LED Lighting
• Present Status of Energy Saving Technologies and Future Prospect in White LED Lighting
• Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
• Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
• Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
• Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates

もっと見る 閉じる

スポンサーリンク