Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy

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概要

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• We have investigated the effects of Si doping on the microscopic optical inhomogeneity of Al<inf>0.61</inf>Ga<inf>0.39</inf>N epitaxial layers through the combined use of scanning electron microscopy (SEM) and cathodoluminescence (CL). Hexagonal hillocks and corresponding CL inhomogeneity in AlGaN epitaxial layers were observed in SEM and CL images, respectively, and the density of such structures increased with increasing the Si concentration. CL spectra of Si-doped AlGaN epitaxial layers taken at 80 K showed near-band-edge emission around 4.9 eV and an emission line around 4.4 eV. Monochromatic CL images of Si-doped AlGaN at the detection energy of 4.4 eV appeared selectively at the edges of hexagonal hillocks, indicating selective incorporation of Si atoms into defects at grain boundaries.

• 2013-08-25

著者

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Yamada Yoichi

  Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Ushijima Fumitaka

  Department of Material Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan

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