Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
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概要
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Deep electronic levels of AlxGa1-xN ($0.25<x<0.60$) were investigated by deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on an AlN/sapphire template by metal–organic vapor phase epitaxy. DLTS analysis using a sampling time window of up to 100 s showed two dominant deep levels with activation energies ($\Delta E$) higher than 1.0 eV in AlxGa1-xN with $x=0.25$ and 0.37. The densities of those levels were higher than $1\times 10^{16}$ cm-3. For the Al0.60Ga0.40N sample, the deeper levels ($\Delta E>1.5$ eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicating that the origin of the dominant deep level in AlGaN is related to a defect complex including anti-site defects and divacancies.
- 2010-10-25
著者
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Sugawara Katsuya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Taketomi Hiroyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Tsu 514-8507, Japan
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Okuzaki Shinya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Tsu 514-8507, Japan
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Sugawara Katsuya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Taketomi Hiroyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Tsu 514-8507, Japan
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