Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film

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概要

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• A stress control method was proposed to suppress crack generation in the hydride vapor phase epitaxy (HVPE) of a thick AlN film on an AlN/sapphire template, i.e., a high-compressive-strain (HCS) AlN/sapphire template was employed as a substrate. The AlN films on the HCS AlN/sapphire template were crack-free and very smooth. However, the AlN films on the normal AlN/sapphire template (with a reduced or fully relaxed compressive strain) contained many cracks. This is because the HCS in the AlN/sapphire template may balance some of the thermal tensile strain resulting from the different thermal expansion coefficients of AlN and sapphire and thus suppress the crack generation. The typical full width at half maximum (FWHM) values of X-ray rocking curves for the (0002), ($10\bar{1}2$), and ($10\bar{1}0$) diffractions of the HVPE-grown AlN film on the HCS template were 127, 381, and 520 arcsec, respectively. Accordingly, by atomic force microscopy (AFM), clear atomic steps were observed on the HVPE-grown AlN films on the HCS template, and the root-mean-square (RMS) roughness value of the AlN films was 0.361 nm.

• Japan Society of Applied Physicsの論文
• 2007-06-25

著者

• Shibata Tomohiko

  Ngk Insulators Ltd.

• Li Da-bing

  Department Of Electrical And Electronic Engineering Mie University

• Tanaka Mitsuhiro

  Ngk Insulators Ltd.

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Shibata Tomohiko

  NGK Insulators, Ltd., Nagoya 467-8530, Japan

• Tsujisawa Kenichi

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Kishino Shinya

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Li Da-Bing

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

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