Analysis of Disorder Scattering in Ga_<0.47>In_<0.53>As Using Gaussian Potential
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概要
- 論文の詳細を見る
Disorder scattering mobility in Ga_<0.47>In<0.53>As is calculated by using a sum of two Gaussian potentials; one representing the difference of strong short range core potentials and the other representing the relatively long range potential, the existence of which has been suggested by our previous paper. Approximate calculations are made and a much steeper temperature dependency than the Brooks' disorder scattering mobility is predicted giving good agreement with the recent mobility measurements.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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Nishinaga Tatau
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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