Doping Effect of Oxygen on Horizontal Bridgman Grown InP
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概要
- 論文の詳細を見る
The doping effect of oxygen in melt grown InP was investigated by both Hall measurement and thermodynamical analysis. In the case when an oxygen doped crystal was grown only in the high-temperature zone, the carrier concentrations were reduced considerably due to the decrease of Si concentration in the InP crystal, and this was explained satisfactorily by the thermodynamical calculations on InP-In_2O_3 system. Hall measurement up to a high temperature revealed that the oxygen atoms did not behave as shallow nor deep impurities in the crystal.
- 社団法人応用物理学会の論文
- 1981-10-05
著者
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Nakano Tetsuo
Device Development Center Hitachi Co. Ltd.
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Nishinaga Tatau
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Pak Kangsa
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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