Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
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概要
- 論文の詳細を見る
By virtue of the poor nucleation of GaN on 3C-SiC, a maskless epitaxial lateral overgrowth (ELO) of GaN was realized on 3C-SiC/Si substrates to improve crystalline quality. The mechanism of the maskless ELO process was investigated by observing surface morphologies at different growth steps. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) confirmed that the grain size of GaN crystallites was increased in the three-dimensional ELO. As a result, the stress in the GaN epilayer decreased with the smaller number of grain boundaries in the coalescence process. The luminescent property was also improved with a decrease in defect density.
- 2013-08-25
著者
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Asamura Hidetoshi
Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan
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Kawamura Keisuke
Air Water Inc., 2-6-40 Chikko Shinmachi, Nishi-ku, Sakai 592-8331, Japan
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Fang Hao
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Takaya Yoshifumi
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Oku Hidehiko
Air Water R&D Co., Ltd., Matsumoto, Nagano 390-1701, Japan
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Oku Hidehiko
Air Water R&D Co., Ltd., Matsumoto, Nagano 390-1701, Japan
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Kawamura Keisuke
Air Water R&D Co., Ltd., Matsumoto, Nagano 390-1701, Japan
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Asamura Hidetoshi
Air Water R&D Co., Ltd., Matsumoto, Nagano 390-1701, Japan
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