Field Emission from GaN Self-Organized Nanotips

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概要

• 論文の詳細を見る

• GaN self-organized nanotips were applied to the cold cathode field emitter, which was fabricated by reactive ion etching (RIE) Field emission from the GaN nanotips was observed for the first time. The microscopic current I through the anode hole (φ= 20 μm) at the anode electrode was 0.1 nA at 900 V. The field enhancement factor βd, which is related to the top structure of the emitter and is the product of the field conversion factor β and the sample-anode gap d, was estimated to be 300 from the Fowler-Nordheim (F-N) plot. The microscopic current I was stable at 12.5 nA for 3600s from the onset of voltage application (standard deviation 0.64 nA).

• 社団法人応用物理学会の論文
• 2002-11-01

著者

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Terada Y

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• TERADA Yuusuke

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• YOSHIDA Harumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• URUSHIDO Tatsuhiro

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Yoshida H

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Urushido Tatsuhiro

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

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