Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
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概要
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We investigated the direct growth of $c$-plane AlN on sapphire (11.0) and (00.1) substrates by low-pressure hydride vapor phase epitaxy (LP-HVPE) without using any buffer, interlayer, or pulsed source supply. The $a$-plane sapphire was confirmed to be effective for obtaining high-quality AlN with an rms surface roughness of 0.156 nm for $2\times 2$ μm2 scan and a large crack-free thickness of 3.6 μm. This was partly attributed to the hexagonal $c$-axis of $a$-sapphire substrate being perpendicular to the hexagonal $c$-axis of AlN, leading to the reduced twist degree of AlN. X-ray rocking curves yielded full widths at half maximum (FWHM) of 487 and 636 arcsec for (10.2) and (10.0) reflections, respectively, indicating a low edge dislocation density (reduced twist degree) in the film.
- Japan Society of Applied Physicsの論文
- 2009-11-25
著者
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Miyake Hideto
Department Of Electrical And Electronics Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronics Engineering Mie University
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Wu Jiejun
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-85
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Okuura Kazuteru
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-85
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Wu Jiejun
Department Of Electrical And Electronics Engineering Mie University
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Okuura Kazuteru
Department Of Electrical And Electronics Engineering Mie University
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