P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-12-20

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Amano Hiroshi

  Department of Cardiology and Pneumology, Dokkyo University School of Medicine

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Amano H

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• KITO Masahiro

  Department of Electronics, Nagoya University

• Kito Masahiro

  Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat

• Kito Masahiro

  Department Of Electronics Nagoya University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Kito Masahiro

  Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat

関連論文

• Selective Area Growth of III-Nitride and Their Application for Emitting Devices
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• Hemodynamic Effects of Positive end-expiratory Pressure on Right Ventricular Diastolic Function in Patients with Acute Myocardial Infarction
• Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Leaflet Folding Plasty for Mitral Valve Repair : Technical Application and Early Outcome
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
• Microscopic Investigation of Al_Ga_N on Sapphire
• Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
• Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
• Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
• Optical Transitions of the Mg Acceptor in GaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
• Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
• Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Optical Properties of Strained AlGaN and GaInN on GaN
• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Present and Future Nitride-Based Devices
• Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
• Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
• Variation of Surface Potentials of Si-Doped Al_xGa_N (O
• Low-Intensity Ultraviolet Photodetectors Based on AlGaN
• Investigation of the Leakage Current in GaN P-N Junctions
• Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
• Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
• Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
• Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
• Field Emission from GaN Self-Organized Nanotips
• Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
• Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
• Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
• In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Electrical Transport Properties of p-GaN
• Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
• Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
• X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
• Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
• Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
• High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
• Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
• Effects of Nano- and Microscale SiO
• Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
• Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Stacking Faults and Luminescence Property of InGaN Nanowires
• Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
• GaN Overgrowth on Thermally Etched Nanoporous GaN Template
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Gel filtration study of the effect of urea on the dissolution state of sodium dodecyl sulfate.
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

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