GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
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概要
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Self-assembled GaN and InGaN nanowires (NWs) were directly grown on a highly oriented pyrolytic graphite (HOPG) substrate by radio frequency molecular beam epitaxy (RF-MBE). The GaN NWs grown on HOPG had a shorter length and larger diameter than those grown conventionally on a Si(111) substrate based on the analysis of scanning electron microscopy (SEM) images. They were also found to have good crystalline qualities with few stacking faults, as determined by scanning transmission electron microscopy (STEM) analysis. Photoluminescence (PL) measurements at room temperature indicated that the luminescence intensity of the GaN NWs on HOPG is stronger than that of NWs grown on a Si(111) substrate; however, the InGaN NWs on both substrates showed similar tendencies with respect to the shift of the luminescence wavelength as a function of the growth temperature. While In incorporation decreased as the growth temperature increased, the uniformity of the InGaN NW arrays improved rapidly.
- 2013-08-25
著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Tabata Takuya
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Nakagawa Shinta
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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