Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
A drastic reduction of the dislocation density in a semipolar ($11\bar{2}2$) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the ($11\bar{2}2$) and ($000\bar{1}$) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the ($\bar{1}\bar{1}22$) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from $4.0\times 10^{8}$ to $1.0\times 10^{5}$/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.
- 2011-01-25
著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Tanikawa Tomoyuki
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Sawaki Nobuhiko
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Murase Tasuku
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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Tanikawa Tomoyuki
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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