Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
スポンサーリンク
概要
- 論文の詳細を見る
A sapphire substrate with a grooved stripe pattern along different radial directions was prepared to investigate the effects of stripe direction on the growth mode and threading dislocation (TD) behavior of GaN films. When the stripe direction is oriented parallel to [10\bar{1}0]_{\text{sapphire}}, the GaN films have a triangular structure that is formed by the GaN\{10\bar{1}1\} facets. As the stripe direction rotates from [10\bar{1}0]_{\text{sapphire}}, nanosteps with a step height of around 80 nm are formed on the GaN\{10\bar{1}1\} facets and then the coalescence of GaN on the ridges and grooves advances. GaN films with a smooth surface and a TD density as low as 2.0\times 10^{8} cm<sup>-2</sup>were achieved when the stripe direction was rotated 3° from [10\bar{1}0]_{\text{sapphire}}. Our result indicates that the surface roughness and TD density of GaN films can be controlled by precisely adjusting the angle of the stripe direction from [10\bar{1}0]_{\text{sapphire}}.
- 2013-08-25
著者
-
Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
-
YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
-
Shibata Naoki
Toyoda Gosei Co., Ltd., Optoelectronics Business Unit, Inazawa, Aichi 490-1312, Japan
-
Okuno Koji
Department of Electrical Engineering and Computer Science, and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Oshio Takahide
Toyoda Gosei Co., Ltd., Optoelectronics Business Unit, Inazawa, Aichi 490-1312, Japan
-
Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
関連論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
- Hemodynamic Effects of Positive end-expiratory Pressure on Right Ventricular Diastolic Function in Patients with Acute Myocardial Infarction
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Leaflet Folding Plasty for Mitral Valve Repair : Technical Application and Early Outcome
- Scintigraphic Detection of Regional Disruption of the Adrenergic Nervous System in Sarcoid Heart disease
- Optimum Rapid Thermal Activation for Mg-doped p-type GaN
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Optical Transitions of the Mg Acceptor in GaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Optical Properties of Strained AlGaN and GaInN on GaN
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
- Present and Future Nitride-Based Devices
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Wannier-Stark Localization in Superlattices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- Investigation of the Leakage Current in GaN P-N Junctions
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
- Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
- Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
- Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
- Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy--Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
- Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
- Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
- Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
- Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
- High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
- Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
- Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
- Effects of Nano- and Microscale SiO
- Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
- GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
- Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
- Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
- Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
- Stacking Faults and Luminescence Property of InGaN Nanowires
- Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
- GaN Overgrowth on Thermally Etched Nanoporous GaN Template
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)
- Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
- Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
- Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
- Gel filtration study of the effect of urea on the dissolution state of sodium dodecyl sulfate.
- GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
- The separation of aluminium(III) and chromium(III) as their AcAc(acetylacetone)-complexes, and of cobalt(II), copper(II), magnesium(II), manganese(II), nickel(II), and lead(II) as their TTA(thenoyltrifluoroacetone)-complexes, by extraction chromatography.