Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
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概要
- 論文の詳細を見る
In this paper, we describe the electrical properties of Mg-doped GaN annealed using rapid thermal annealing. Metal–organic vapor phase epitaxy (MOVPE)-grown samples with Mg concentrations ranging from $1.25 \times 10^{19}$ to $1 \times 10^{20}$ cm-3 were annealed at various temperatures in a nitrogen atmosphere. It was found that the maximum hole concentration achieved after rapid thermal annealing is limited to approximately $8 \times 10^{17}$ cm-3 at room temperature and its optimum annealing temperature decreases with increasing Mg concentration. The temperature dependence of hole concentration suggested that the formation of donor complex defects is responsible for the suppressed electrical activation of Mg acceptors after annealing at high temperatures higher than the optimum annealing temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Ito Shuichi
Graduate School Of Engineering University Of Fukui
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Shiojima Kenji
Graduate School Of Engineering University Of Fukui
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SAITO Hiroshi
Graduate School of Engineering, University of Fukui
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YAMADA Shuhei
Toyoda gosei Corporation
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SHIBATA Naoki
Toyoda gosei Corporation
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Kuzuhara Masaaki
Graduate School Of Engineering University Of Fukui
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Nagamori Motoi
Graduate School Of Engineering University Of Fukui
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Nagamori Motoi
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
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Shibata Naoki
Toyoda Gosei Corporation, Inazawa, Aichi 490-1312, Japan
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Yamada Shuhei
Toyoda Gosei Corporation, Inazawa, Aichi 490-1312, Japan
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Shiojima Kenji
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
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Ito Shuichi
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
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Shibata Naoki
Toyoda Gosei Co., Ltd., Optoelectronics Business Unit, Inazawa, Aichi 490-1312, Japan
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Shiojima Kenji
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
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