招待講演 Electron devices based on GaN and related nitride semiconductors (Electron devices)
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概要
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State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been described. The importance of field plate design for achieving optimum high breakdown voltages is discussed based on a two-dimensional numerical device simulation, taking material parameters of the insulating film into account. Simulation results also indicated that an InN or In-rich InGaN channel FET is extremely promising for THz frequency operation. Novel III-nitride heterostructures, such as AlInN/InN/AlInN and AlInN/InGaN/AlInN fabricated on non-polar substrates, will provide additional freedom in designing a new device structure that ensures both high current drive capability and high-frequency performance. We predict that millimeter-wave high-power transistors operated at over 60GHz will become more important to establish safe and sustainable society in the future.
- 2009-06-17
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