Optimum Rapid Thermal Activation for Mg-doped p-type GaN
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Ito Shuichi
Graduate School Of Engineering University Of Fukui
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Shiojima Kenji
Graduate School Of Engineering University Of Fukui
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NAGAMORI Motoi
Graduate School of Engineering, University of Fukui
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SAITO Hiroshi
Graduate School of Engineering, University of Fukui
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YAMADA Shuhei
Toyoda gosei Corporation
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SHIBATA Naoki
Toyoda gosei Corporation
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KUZUHARA Masaaki
Graduate School of Engineering, University of Fukui
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Kuzuhara Masaaki
Graduate School Of Engineering University Of Fukui
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Nagamori Motoi
Graduate School Of Engineering University Of Fukui
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Shibata Naoki
Toyoda Gosei Co., Ltd., Optoelectronics Business Unit, Inazawa, Aichi 490-1312, Japan
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Shiojima Kenji
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
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- Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts
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- Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts
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- High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces
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