Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

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概要

• 論文の詳細を見る

• We investigated the electrical characteristics of V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure field effect transistors (HFETs). A minimum ohmic contact resistivity of $1.6\times 10^{-6}$ $\Omega$ cm2 was achieved after annealing at 550 °C by optimizing V thickness to 15 nm. Cross-sectional transmission electron microscope (TEM) images exhibited a large difference in the extent of metal reaction between V/Al/Mo/Au and Ti/Al/Mo/Au. In addition to their lower contact resistivities, the low-temperature annealed V/Al/Mo/Au ohmic contacts exhibited better characteristics, such as enhanced breakdown voltages by about 100 V and smooth surface morphology, than the Ti/Al/Mo/Au ohmic contact annealed at the optimum annealing temperature.

• 2010-04-25

著者

• Nagamori Motoi

  Graduate School Of Engineering University Of Fukui

• Chikaoka Hironari

  Graduate School Of Engineering University Of Fukui

• Motoi Nagamori

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Hironari Chikaoka

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Yafune Norimasa

  Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Fuminao Watanabe

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• Keiichi Sakuno

  Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Masaaki Kuzuhara

  Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

• YAFUNE Norimasa

  Sharp Corporation

関連論文

• Optimum Rapid Thermal Activation for Mg-doped p-type GaN
• High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
• Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
• Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
• Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
• Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
• Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
• Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
• Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

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