Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures(Session9B: GaN and SiC Device Process Technology)
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概要
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This paper describes optimum design for non-polar AlGaN/GaN heterostructures with reduced ohmic contact resistances. The tunneling contact resistivity ρ_c was evaluated based upon numerical calculation of tunneling current density across AlGaN barrier layers. By introducing an n^+-Al_xGa_<1-X>N layer between n^+-GaN cap layer and AlGaN barrier layer, the tunneling contact resistivity ρ_c was improved by as large as four orders of magnitude, compared to standard AlGaN/GaN heterostructures.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
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Shiojima Kenji
Graduate School Of Engineering University Of Fukui
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Kuzuhara Masaaki
Graduate School Of Engineering University Of Fukui
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CHIKAOKA Hironari
Graduate School of Engineering, University of Fukui
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Takakuwa Youichi
Graduate School of Engineering, University of Fukui
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Takakuwa Youichi
Graduate School Of Engineering University Of Fukui
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Chikaoka Hironari
Graduate School Of Engineering University Of Fukui
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